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2SC5876 Datasheet(PDF) 2 Page - Rohm

Part No. 2SC5876
Description  Medium power transistor (60V, 0.5A)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SC5876 Datasheet(HTML) 2 Page - Rohm

   
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2SC5876
Transistor
2/3
!
!
!
!Electrical characteristics (Ta=25
°C)
∗1 Pulse measurement
∗1
∗1
Parameter
Symbol
BVEBO
ICBO
IEBO
VCE(sat)
fT
hFE
Cob
Ton
Min.
6
120
300
−−
5
70
1.0
1.0
150
300
390
IE
=100µA
VCE
=2V, IC=50mA
VCB
=40V
VEB
=4V
IC
=100mA, IB=10mA
IC
=500mA,
IB1
=50mA
IB2
= −50mA
VCC 25V
VCE
=10V, IE= −100mA, f=10MHz
VCB
=10V, IE=0mA, f=1MHz
V
µA
µA
MHz
mV
pF
ns
Tstg
130
ns
Tf
80
ns
Typ.
Max.
Unit
Conditions
BVCEO
60
−−
V
IC
=1mA
Collector
−emitter breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector
−emitter staturation voltage
BVCBO
60
−−
IC
=100µA
V
Collector
−base breakdown voltage
Emitter
−base breakdown voltage
!
!
!
!hFE RANK
QR
120-270
180-390
!
!
!
!Electrical characteristic curves
Fig.1 Safe operating area
COLLECTOR EMITTER VOLTAGE : VCE (V)
110
0.1
100
10
1
0.1
0.01
DC
1ms
10ms
100ms
Single non
repetitive pulse
500
µs
Fig.2 Switching Time
1
0.01
0.1
10
1000
100
10
COLLECTOR CURRENT : IC (A)
Ta
=25°C
VCC
=25V
IC/IB
=10/1
Tstg
Tf
Ton
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : IC (A)
0.01
0.1
0.001
1
1000
100
10
1
Ta
=125°C
Ta
=25°C
Ta
= −40°C
VCE
=2V
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
0.001
0.01
0.1
1
1
10
100
1000
VCE
=3V
VCE
=2V
Ta
=25°C
VCE
=5V
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
1
IC/IB
=10/1
Ta
=125°C
Ta
=25°C
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta
= −40°C
0.001
0.1
0.01
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
IC/IB
=20/1
Ta
=25°C


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