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HT9032C Datasheet(PDF) 3 Page - Holtek Semiconductor Inc

Part # HT9032C
Description  Calling Line Identification Receiver
Download  11 Pages
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Manufacturer  HOLTEK [Holtek Semiconductor Inc]
Direct Link  http://www.holtek.com
Logo HOLTEK - Holtek Semiconductor Inc

HT9032C Datasheet(HTML) 3 Page - Holtek Semiconductor Inc

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Absolute Maximum Ratings
Voltages are referenced to VSS, except where noted.
Supply Voltage .........................................
-0.5V to 6.0V
All Input Voltages.................................................25mW
Operating Temperature Range ...................0
°Cto70°C
Storage Temperature Range ................
-40°Cto150°C
Note: These are stress ratings only. Stresses exceeding the range specified under
²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
D.C. Characteristics
Crystal=3.58MHz, Ta=0~70
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Conditions
VDD
Supply Voltage
¾¾
3.5
5
5.5
V
IDD1
Supply Current
5V
PDWN=0 (3.58MHz OSC on)
¾
3.2
5
mA
IDD2
Supply Current
5V
PDWN=1 and RTIME=0
(3.58MHz OSC on and internal
circuits partially on)
¾
1.9
2.5
mA
ISTBY
Standby Current
5V
PDWN=1 and RTIME=1
(3.58MHz OSC off)
¾¾
1
mA
VIL
Input Voltage Logic 0
5V
¾¾
¾
0.2V
VDD
VIH
Input Voltage Logic 1
5V
¾
0.8V
¾¾
VDD
IOL
Output Voltage Logic 0
5V
IOL=1.6mA
¾¾
0.1V
VDD
IOH
Output Voltage Logic 1
5V
IOH=0.8mA
0.9V
¾¾
VDD
IIN
Input Leakage Current, All Inputs
5V
¾-1
¾
1
mA
VT-
Input Low Threshold Voltage
5V
RDET1, RTIME, PDWN
2.0
2.3
2.6
V
VT+
Input High Threshold Voltage
5V
RDET1, RTIME, PDWN
2.5
2.75
3.0
V
VTRDET2
Input Threshold Voltage
5V
RDET2
1.0
1.1
1.2
V
RIN
Input DC Resistance
5V
TIP, RING
¾
500
¾
k
W
HT9032C/HT9032D
Rev. 1.50
3
December 20, 2016
T I P
V D D
R T I M E
R D E T 1
X 2
P D W N
V S S
R I N G
C D E T
R D E T
X 1
R D E T 2
D O U T C
D O U T
H T 9 0 3 2 C
~
3 . 5 8 M H z
1 0 M W
3 0 p F
0 . 1 m F
S u p p l y c u r r e n t t e s t i n g : A l l , e x c e p t P D W N a n d R T I M E , u n w i r e d p i n s a r e l e f t f l o a t i n g .


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