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SZESD8704MUTAG Datasheet(PDF) 7 Page - ON Semiconductor

Part # SZESD8704MUTAG
Description  ESD Protection Diode
Download  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SZESD8704MUTAG Datasheet(HTML) 7 Page - ON Semiconductor

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ESD8704
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7
Figure 14. USB 3.0/3.1 Standard Layout Diagram
Vbus
StdA_SSTX+
D−
StdA_SSTX−
D+
GND_DRAIN
GND
StdA_SSRX+
StdA_SSRX−
USB 3.0/3.1 Type A
Connector
ESD8704
ESD7L5.0
PCB Layout Guidelines
Steps must be taken for proper placement and signal trace
routing of the ESD protection device in order to ensure the
maximum ESD survivability and signal integrity for the
application. Such steps are listed below.
Place the ESD protection device as close as possible to
the I/O connector to reduce the ESD path to ground and
improve the protection performance.
In USB 3.0 applications, the ESD protection device
should be placed between the AC coupling
capacitors and the I/O connector on the TX
differential lanes as shown in Figure 15. In this
configuration, no DC current can flow through the
ESD protection device preventing any potential
latch-up condition. For more information on latchup
considerations, see below description on Page 8.
Make sure to use differential design methodology and
impedance matching of all high speed signal traces.
Use curved traces when possible to avoid unwanted
reflections.
Keep the trace lengths equal between the positive
and negative lines of the differential data lanes to
avoid common mode noise generation and
impedance mismatch.
Place grounds between high speed pairs and keep as
much distance between pairs as possible to reduce
crosstalk.
Figure 15. USB 3.0/3.1 Connection Diagram


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