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TPC8208 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8208 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8208 2003-02-18 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) VGS = 1.4 V 0 0.2 0.4 0.6 Common source Ta = 25°C Pulse test 0.8 1 0 2 4 6 8 10 1.9 2.5 2 4 10 3 1.8 1.7 1.6 1.5 0 0 0.5 1 1.5 2 2.5 2 4 6 8 10 Common source VDS = 10 V Pulse test Ta = -55°C 100 25 0 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 Common source Ta = 25°C Pulse test ID = 5 A 2.5 1.2 1 0.1 1 10 100 10 100 1000 VGS = 2.5 V 4 Common source Ta = 25°C Pulse test 0.1 0.1 1 10 30 1 10 100 Common source VDS = 10 V Pulse test Ta = -55°C 100 25 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 VGS = 1.4 V 10 5 4 Common source Ta = 25°C Pulse test 1.8 2.6 3 2.4 2.2 2.0 1.6 |
Similar Part No. - TPC8208 |
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Similar Description - TPC8208 |
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