TSX712IYST datasheet(6/31 Pages) STMICROELECTRONICS

Part #	TSX712IYST

Description	Low-power, precision, rail-to-rail, 2.7 MHz, 16 V CMOS operational amplifiers

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

TSX711, TSX711A, TSX712

6/31

DocID025959 Rev 5

nV

Hz

------------

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VOL

Low level output voltage

RL= 2

kΩ tο VCC/2

23

50

mV

Tmin < Top < Tmax

60

RL= 10

kΩ tο VCC/2

5

15

Tmin < Top < Tmax

20

Iout

(TSX711,

TSX711A)

Isink

Vout = VCC

35

45

mA

Tmin < Top < Tmax

20

Isource

Vout = 0 V

35

45

Tmin < Top < Tmax

20

Iout

(TSX712)

Isink

Vout = VCC

25

37

Tmin < Top < Tmax

15

Isource

Vout = 0 V

35

45

Tmin < Top < Tmax

20

ICC

Supply current per

amplifier

No load, Vout = VCC/2

570

800

μA

Tmin < Top < Tmax

900

GBP

Gain bandwidth product

RL = 10

kΩ, CL = 100 pF

1.9

2.7

MHz

ɸm

Phase margin

RL

= 10 kΩ, CL = 100 pF

50

Degrees

Gm

Gain margin

RL

= 10 kΩ, CL = 100 pF

15

dB

SRn

Negative slew rate

Av = 1, Vout = 3 VPP, 10 % to

90 %

0.6

0.85

V/μs

Tmin < Top < Tmax

0.5

SRp

Positive slew rate

Av = 1, Vout = 3VPP, 10 % to

90 %

1.0

1.4

Tmin < Top < Tmax

0.9

en

Equivalent input noise

voltage

f = 1 kHz

22

f = 10 kHz

19

THD+N

Total harmonic distortion

+ noise

f =1 kHz, Av = 1, RL

= 10 kΩ,

BW = 22 kHz, Vin= 0.8 VPP

0.001

%

Notes:

(1)Maximum values are guaranteed by design.

(2)Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and

assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.6).

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