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TSX920 Datasheet(PDF) 6 Page - STMicroelectronics |
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TSX920 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 32 page Electrical characteristics TSX920, TSX921, TSX922, TSX923 6/32 DocID024310 Rev 4 Symbol Parameter Conditions Min. Typ. Max. Unit Iout Isink Vout = 4.5 V 16 21 mA Tmin < Top < Tmax 13 Isource Vout = 0 V 16 21 Tmin < Top < Tmax 13 ICC Supply current (per amplifier) No load, Vout = VCC/2 2.9 3.4 Tmin < Top < Tmax 3.5 GBP Gain bandwidth product RL = 10 kΩ, CL = 20 pF, G = 20 dB 9 MHz FU Unity gain frequency RL = 10 kΩ, CL = 20 pF 9.3 ɸm Phase margin 60 Degrees Gm Gain margin 6.7 dB SR+ Positive slew rate Av = 1, Vout = 0.5 to 4.0 V, measured between 10 % to 90 % 14.7 V/μs SR- Negative slew rate Av = 1, Vout = 4.0 to 0.5 V, measured between 90 % to 10 % 17.2 en Equivalent input noise voltage f = 10 kHz 17.9 nV√Hz f = 100 kHz 12.9 ∫en Low-frequency peak-to- peak input noise Bandwidth: f = 0.1 to 10 Hz 8.1 µVpp THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL = 10 kΩ, Vout = 2 Vrms 0.002 % Shutdown characteristics (TSX920 and TSX923 only) ICC_shdn Supply current in shutdown mode (per amplifier) SHDN = VCC- 7 15 µΑ Tmin < Top < Tmax 20 ton Amplifier turn-on time 9 µs toff Amplifier turn-off time 0.7 Notes: (1) Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.5: "Long term input offset voltage drift"). (2) When used in comparator mode, with high differential input voltage, during a long period of time with VCC close to 16 V and Vicm>VCC/2, Vio can experience a permanent drift of a few mV drift. This phenomenon is notably worse at low temperatures. |
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