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TA2136F Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TA2136F Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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TA2136F/N 2002-02-12 4 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Supply voltage VCC 12 V TA2136F (Note 5) *400 Power dissipation Pd TA2136N (Note 6) *1200 mW Operating temperature Topr -40 to 85 °C Storage temperature Tstg -55 to 150 °C Note 5: Derated above 25°C in the proportion of 3.2 mW/°C Note 6: Derated above 25°C in the proportion of 9.6 mW/°C Electrical Characteristics (unless otherwise specified, VCC ==== 9 V, f ==== 1 kHz, RL ==== 10 kW W W W, Vin ==== ----10dBV, Rg ==== 600 W W W W, bypass mode, Ta ==== 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Supply voltage VCC ¾ Vin = 0 4.5 9 12 V Iccq (BYP) ¾ Vin = 0 ¾ 4 7 Iccq (SRS) ¾ Vin = 0, SRS STEREO ¾ 8 14 Supply current Iccq (MONO) ¾ Vin = 0, SRS MONO ¾ 8 14 mA Input resistance Rin ¾ ¾ 40 50 60 k W Output clipping voltage VOCL ¾ THD = 1% 1.4 1.7 ¾ Vrms THD (SRS) ¾ SRS STEREO, Space&Center: max ¾ 0.15 ¾ THD (MONO) ¾ SRS MONO ¾ 0.2 ¾ Total harmonic distortion THD (BYP) ¾ SRS BYPASS, TEST = “H” ¾ 0.004 ¾ % Bypass gain ＧV (BYP) ¾ ¾ -5 -3 -1 dB Output noise voltage VON (SRS) ¾ Input = GND, Space&Center: MID BW = 20 Hz to 20 kHz ¾ 35 50 mVrms VCH ¾ High level 2 ¾ VCC Mode select control voltage VCL ¾ Low level GND ¾ 1 V <Mode Select> Mode Mode1 Mode2 Bypass L ¾ 3D stereo H H 3D mono H L |
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