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TA2136F Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. TA2136F
Description  TOSHIBA Bipolar Liner Integrated Circuit Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA2136F Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TA2136F/N
2002-02-12
4
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
12
V
TA2136F
(Note 5)
*400
Power dissipation
Pd
TA2136N
(Note 6)
*1200
mW
Operating temperature
Topr
-40 to 85
°C
Storage temperature
Tstg
-55 to 150
°C
Note 5: Derated above 25°C in the proportion of 3.2 mW/°C
Note 6: Derated above 25°C in the proportion of 9.6 mW/°C
Electrical Characteristics
(unless otherwise specified, VCC
==== 9 V, f ==== 1 kHz, RL ==== 10 kW
W
W
W, Vin ==== ----10dBV, Rg ==== 600 W
W
W
W,
bypass mode, Ta
==== 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Supply voltage
VCC
¾
Vin = 0
4.5
9
12
V
Iccq (BYP)
¾
Vin = 0
¾
4
7
Iccq (SRS)
¾
Vin = 0, SRS STEREO
¾
8
14
Supply current
Iccq (MONO)
¾
Vin = 0, SRS MONO
¾
8
14
mA
Input resistance
Rin
¾
¾
40
50
60
k
W
Output clipping voltage
VOCL
¾
THD
= 1%
1.4
1.7
¾
Vrms
THD (SRS)
¾
SRS STEREO,
Space&Center: max
¾
0.15
¾
THD (MONO)
¾
SRS MONO
¾
0.2
¾
Total harmonic distortion
THD (BYP)
¾
SRS BYPASS, TEST
= “H”
¾
0.004
¾
%
Bypass gain
V (BYP)
¾
¾
-5
-3
-1
dB
Output noise voltage
VON (SRS)
¾
Input
= GND,
Space&Center: MID
BW
= 20 Hz to 20 kHz
¾
35
50
mVrms
VCH
¾
High level
2
¾
VCC
Mode select control voltage
VCL
¾
Low level
GND
¾
1
V
<Mode Select>
Mode
Mode1
Mode2
Bypass
L
¾
3D stereo
H
H
3D mono
H
L


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