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SUD50P04-15 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SUD50P04-15
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-15 Datasheet(HTML) 4 Page - Vishay Siliconix

   
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SUD50P04-15
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
4
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TJ – Junction Temperature (_C)
VSD – Source-to-Drain Voltage (V)
0
0.5
1.0
1.5
2.0
2.5
–50
–25
0
25
50
75
100
125
150
175
100
10
1
0.3
0.6
0.9
1.2
1.5
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
0
THERMAL RATINGS
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
Safe Operating Area
VDS – Drain-to-Source Voltage (V)
500
10
0.1
0.1
1
10
100
Limited
by rDS(on)
1
100
TC = 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10–4
10–3
10–2
10–1
110
Maximum Drain Current vs.
Case Temperature
TC – Case Temperature (_C)
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10
ms
30
100
ms
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 40_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
0.02


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