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SUD50P04-15 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD50P04-15
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-15 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD50P04-15
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = –250 mA
–40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –40 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –40 V, VGS = 0 V, TJ = 125_C
–50
mA
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
–120
A
DiS
OS
R
i
a
VGS = –10 V, ID = –30 A
0.012
0.015
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –30 A, TJ = 125_C
0.024
W
VGS = –4.5 V, ID = –20 A
0.018
0.023
Forward Transconductancea
gfs
VDS = –15 V, ID = –30 A
20
S
Dynamicb
Input Capacitance
Ciss
5400
F
Output Capacitance
Coss
VGS = 0 V, VDS = –25 V, f = 1 MHz
640
pF
Reverse Transfer Capacitance
Crss
300
Total Gate Chargec
Qg
V20 V V
10 V I
50 A
85
130
C
Gate-Source Chargec
Qgs
VDS = –20 V, VGS = –10 V, ID = –50 A
25
nC
Gate-Drain Chargec
Qgd
15
Turn-On Delay Timec
td(on)
V20 V R
0 4
W
15
25
Rise Timec
tr
VDD = –20 V, RL = 0.4 W
I50 A V
10 V R
2 5
W
380
580
ns
Turn-Off Delay Timec
td(off)
DD
,
L
ID ^ –50 A, VGEN = –10 V, RG = 2.5 W
75
115
ns
Fall Timec
tf
140
210
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
–150
A
Diode Forward Voltagea
VSD
IF = –50 A, VGS = 0 V
–1.2
–1.5
V
Source-Drain Reverse Recovery Time
trr
IF = –50 A, di/dt = 100 A/ms
40
80
ns
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


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