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SQD400AA120 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com SQD400AA120 TRANSISTOR MODULE UL;E76102 (M) Thermal Impedance (junction to case) SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction. ● IC=400A, VCEX=1200V ● Low saturation voltage for higher efficiency ● High DC current gain. ● Isolated monuting base (Applications) Motor Control (VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application ■Maximum Ratings (Tj=25℃ unless otherwise specified) ■Electrical Characteristics Symbol Item Conditions Ratings SQD400AA120 Unit VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage VBE =−2V 1200 V VCEX(SUS) Collector-Emitter Sustaning Voltage IC =80A,IB2=−18A 1200 V Emitterr-Base Voltage V VEBO 10 IC Collector Current 400 A −IC Reverse Collector Current 400 A IB Base Current 20 A PT Total power dissipation TC =25℃ 3120 W Tj Junction Temperature −40 to +150 ℃ Tstg Storage Temperature −40 to +125 ℃ VISO Isolation Voltage A.C. 1minute 2500 V Mounting Torque Mouting (M6) Terminal (M8) Recommended Value 2.5-3.9 (25-40) 4.7 (48) Recommended Value 8.8-10 (90-105) 11 (115) Terminal (M4) Recommended Value 1.0-1.4 (10-14) 1.5 (15) N ・m ( ㎏f・B) Mass Typical Value 670 g 113max. 4-φ6.5 3-M4 93±0.2 21.5 23.0 29.0 29.5 2-M8 BX C E Unit :A Symbol Item Conditions Ratings Min. Max 5.00 1000 75 100 3.0 3.5 3.0 17.0 3.0 1.8 0.04 0.16 Unit ICBO Collector Cut-off Current VCB =1200V mA IEBO Emitter Cut-off Current VEB =10V mA hFE Ic =400A,VCE=2.8V DC Current Gain Ic =400A,VCE=5V VCE(sat) Collector-Emitter Sturation Voltage Ic =400A,IB=8A V VBE(sat) Base-Emitter Saturation Voltage Ic =400A,IB=8A V μs V ℃/W ton On Time Storage Time Fall Time ts tf Vcc =600V,Ic=400A IB1 =8A,IB2=−8A Ic =−400A Transistor part Diode part VECO Rth (j-c) Switching Time Collector-Emitter Reverse Voltage B BX EX EC SanRex ® |
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