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SQD400AA120 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # SQD400AA120
Description  TRANSISTOR MODULE
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SQD400AA120 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD400AA120
TRANSISTOR MODULE
UL;E76102
(M)
Thermal Impedance
(junction to case)
SQD400AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The
mounting base of the module is electrically isolated from Semiconductor elements for
simple heatsink construction.
IC=400A, VCEX=1200V
Low saturation voltage for higher efficiency
High DC current gain.
Isolated monuting base
(Applications)
Motor Control
(VVVF)
, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
■Electrical Characteristics
Symbol
Item
Conditions
Ratings
SQD400AA120
Unit
VCBO
Collector-Base Voltage
1200
V
VCEX
Collector-Emitter Voltage
VBE
=−2V
1200
V
VCEX(SUS) Collector-Emitter Sustaning Voltage
IC
=80A,IB2=−18A
1200
V
Emitterr-Base Voltage
V
VEBO
10
IC
Collector Current
400
A
−IC
Reverse Collector Current
400
A
IB
Base Current
20
A
PT
Total power dissipation
TC
=25℃
3120
W
Tj
Junction Temperature
−40 to +150
Tstg
Storage Temperature
−40 to +125
VISO
Isolation Voltage
A.C. 1minute
2500
V
Mounting Torque
Mouting
(M6)
Terminal
(M8)
Recommended Value 2.5-3.9
(25-40)
4.7
(48)
Recommended Value 8.8-10
(90-105)
11
(115)
Terminal
(M4)
Recommended Value 1.0-1.4
(10-14)
1.5
(15)
N
・m
(
㎏f・B)
Mass
Typical Value
670
g
113max.
4-φ6.5
3-M4
93±0.2
21.5
23.0
29.0
29.5
2-M8
BX
C
E
Unit
:A
Symbol
Item
Conditions
Ratings
Min.
Max
5.00
1000
75
100
3.0
3.5
3.0
17.0
3.0
1.8
0.04
0.16
Unit
ICBO
Collector Cut-off Current
VCB
=1200V
mA
IEBO
Emitter Cut-off Current
VEB
=10V
mA
hFE
Ic
=400A,VCE=2.8V
DC Current Gain
Ic
=400A,VCE=5V
VCE(sat)
Collector-Emitter Sturation Voltage
Ic
=400A,IB=8A
V
VBE(sat)
Base-Emitter Saturation Voltage
Ic
=400A,IB=8A
V
μs
V
℃/W
ton
On Time
Storage Time
Fall Time
ts
tf
Vcc
=600V,Ic=400A
IB1
=8A,IB2=−8A
Ic
=−400A
Transistor part
Diode part
VECO
Rth
(j-c)
Switching Time
Collector-Emitter Reverse Voltage
B
BX
EX
EC
SanRex
®


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