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ALD210804 Datasheet(PDF) 7 Page - Advanced Linear Devices

Part # ALD210804
Description  PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER MATCHED PAIR
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

ALD210804 Datasheet(HTML) 7 Page - Advanced Linear Devices

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ALD210804
Advanced Linear Devices
7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
100
80
60
40
20
0
5
4
3
2
1
0
VGS = VGS(th) + 4V
+125°C
+70°C
-55°C
+25°C
ZERO TEMPERATURE COEFFICIENT (ZTC)
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
500
300
0
+0.3
+0.5
0
+0.4
+0.2
+0.1
400
200
100
+125°C
- 55°C
+25°C
VDS = + 0.1V
Zero Temperature
Coefficient (ZTC)
DRAIN SOURCE ON CURRENT vs.
GATE SOURCE OVERDRIVE VOLTAGE
100
80
60
40
20
0
5
4
3
2
1
0
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
VDS = + 10V
-55°C
+25°C
+70°C
+125°C
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
0
10
20
30
40
70
60
50
DRAIN SOURCE ON CURRENT - IDS(ON) (mA)
4
3
2
5
1
0
+125°C
+25°C
+70°C
-55°C
0°C
V+ = VDS = + 5V
GATE THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
2.0
0
AMBIENT TEMPERATURE - TA (°C)
-50
-25
0
+25
+50
+125
+100
+75
-1.0
-2.0
1.0
VDS = + 0.1V
ID = 10µA
VGS(th) = 0.8V
VGS(th) = 0.0V
VGS(th) = -1.4V
5
4
3
2
1
0
10
8
6
4
2
0
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
DRAIN SOURCE ON CURRENT - IDS(ON) (mA)
VDS = + 0.2V
+125°C
+70°C
+25°C
- 55°C
0°C


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