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SI4470EY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4470EY
Description  N-Channel 60-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4470EY Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFETS
D Extended Temperature Range
APPLICATION
D Primary Side Switch
Si4470EY
Vishay Siliconix
Document Number: 71606
S-03951—Rev. B, 26-May-03
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
60
0.011 @ VGS = 10 V
12.7
60
0.013 @ VGS = 6.0 V
11.7
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information: Si4470EY
Si4470EY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
12.7
9.0
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
10.6
7.5
Pulsed Drain Current
IDM
50
A
Avalanch Current
L = 0.1 mH
IAS
50
Continuous Source Current (Diode Conduction)a
IS
3.1
1.5
Maximum Power Dissipationa
TA = 25_C
PD
3.75
1.85
W
Maximum Power Dissipationa
TA = 70_C
PD
2.6
1.3
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
33
40
Maximum Junction-to-Ambienta
Steady State
RthJA
65
80
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
21
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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