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SI1026X Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI1026X
Description  N-Channel 60-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI1026X Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si1026X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71434
S-03518—Rev. A, 23-Apr-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 mA
60
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 0.25 mA
1
2.5
V
VDS = 0 V, VGS = "10 V
"150
Gate-Body Leakage
IGSS
"
"
VDS = 0 V, VGS = "5 V
"50
VDS = 50 V, VGS = 0 V
10
nA
Zero Gate Voltage Drain Current
IDSS
TJ = 85_C
100
VDS = 10 V, VGS = 4.5 V
500
On-State Drain Currenta
ID(on)
VDS = 7.5 V, VGS = 10 V
800
mA
VGS = 4.5 V, ID = 200 mA
3.0
Drain-Source On-Resistancea
rDS(on)
VGS = 10 V, ID = 500 mA
1.40
W
TJ = 125_C
2.50
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
200
mS
Diode Forward Voltagea
VSD
VGS = 0 V, IS = 200 mA
1.40
V
Dynamicb
Total Gate Charge
Qg
600
Gate-Source Charge
Qgs
VDS =10 V, ID = 250 mA
VGS = 4.5 V
120
pC
Gate-Drain Charge
Qgd
VGS = 4.5 V
225
Input Capacitance
Ciss
30
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V
f = 1 MHz
6
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
Switchingb, c
Turn-On Time
t(on)
VDD = 30 V, RL = 150 W
15
Turn-Off Time
t(off)
ID = 200 mA, VGEN = 10 V
RG = 10 W
20
ns
Notes
a.
Pulse test: PW
v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.


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