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SI1026X Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI1026X
Description  N-Channel 60-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI1026X Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Si1026X
Vishay Siliconix
New Product
Document Number: 71434
S-03518—Rev. A, 23-Apr-01
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on) (W)
VGS(th) (V)
ID (mA)
60
1.40 @ VGS = 10 V
1 to 2.5
500
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 1.40 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 15 ns (typ)
D Low Input and Output Leakage
D Miniature Package
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Marking Code: E
Top View
3
1
D2
G2
S1
5
2
4
6
D1
S2
G1
SC-89
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
V
_
TA = 25_C
320
305
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
230
220
Pulsed Drain Currentb
IDM
–650
mA
Continuous Source Current (diode conduction)a
IS
450
380
TA = 25_C
280
250
Maximum Power Dissipationa
TA = 85_C
PD
145
130
mW
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
Surface Mounted on FR4 Board.
b.
Pulse width limited by maximum junction temperature.


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