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UCC27712

SLUSCE9 – JUNE 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±1500

V

Charged-device model (CDM), per JEDEC specification JESD22-

±500

(1)

Logic operational for HS of –11 V to +600 V at HB–HS = 15 V

7.3 Recommended Operating Conditions

All voltages are with respect to COM, over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

IGBT applications

10

20

V

MOSFET applications

10

17

HB–HS

Driver bootstrap voltage

IGBT applications

10

20

MOSFET applications

10

17

HS

–11

600

HI, LI

Input voltage with respect to COM

–4

20

Ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

UCC27712

UNIT

(SOIC)

8 PINS

Junction-to-ambient thermal resistance

108.3

°C/W

Junction-to-case (top) thermal resistance

61.5

°C/W

Junction-to-board thermal resistance

57.9

°C/W

Junction-to-top characterization parameter

15.3

°C/W

Junction-to-board characterization parameter

57.2

°C/W

7.5 Electrical Characteristics

(unless otherwise noted). Currents are positive into and negative out of the specified terminal.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY BLOCK

Turn-on threshold voltage of VDD

8.0

8.9

9.8

V

Turn-off threshold voltage of VDD

7.5

8.4

9.3

Hysteresis of VDD

0.5

Turn-on threshold voltage of

VHB–VHS

7.2

8.2

9.2

Turn-off threshold voltage of

VHB–VHS

6.4

7.3

8.3

Hysteresis of VHB–VHS

0.5

0.9