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RN4987 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN4987 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page RN4987 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4987 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Includeing two devices in US6 (Ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 10kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Q2 Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −100 mA JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg Unit: mm |
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