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RN1441 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. RN1441
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Download  9 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1441 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN1441
~RN1444
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50V, IE = 0
0.1
µA
Emitter cut-off current
IEBO
VEB = 25V, IC = 0
0.1
µA
DC current gain
hFE (Note)
VCE = 2V, IC = 4mA
200
1200
Collector-emitter saturation voltage
VCE (sat)
IC = 30mA, IB = 3mA
0.1
V
Transition frequency
fT
VCE = 6V, IC = 4mA
30
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
4.8
pF
RN1441
3.9
5.6
7.3
RN1442
7
10
13
RN1443
15.4
22
28.6
Input resistor
RN1444
R1
1.54
2.2
2.86
kΩ
Note : hFE classification
A: 200~700
B: 350~1200


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