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RN1422 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. RN1422
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Download  8 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1422 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN1421
~RN1427
2002-02-08
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50V, IE = 0
100
Collector cut-off
current
RN1421~1427
ICEO
VCE = 50V, IB = 0

500
nA
RN1421
3.85
7.14
RN1422
1.75
3.25
RN1423
0.82
1.52
RN1424
VEB = 10V, IC = 0
0.38
0.71
RN1425
0.365
0.682
RN1426
VEB = 5V, IC = 0
0.35
0.65
Emitter cut-off current
RN1427
IEBO
VEB = 6V, IC = 0
0.378
0.703
mA
RN1421
60
RN1422
65
RN1423
70
RN1424
90
RN1425
90
RN1426
90
DC current gain
RN1427
hFE
VCE = 1V, IC = 100mA
90
IC = 50mA, IB = 2mA
Collector-emitter
saturation voltage
RN1421~1427
VCE (sat)
IC = 50mA, IB = 1mA
0.25
V
RN1421
1.0

3.5
RN1422
1.4
4.5
RN1423
2.0
6.5
RN1424
3.0
12.0
RN1425
0.6
2.0
RN1426
0.7
2.5
Input voltage (ON)
RN1427
VI (ON)

VCE = 0.2V, IC = 100mA
1.0
3.0
V
RN1421~1424
0.8
1.3
RN1425, 1426
0.4
0.8
Input voltage (OFF)
RN1427
VI (OFF)

VCE = 5V, IC = 0.1mA
0.5

1.0
V
Transition frequency
RN1421~1427
fT

VCE = 5V, IC = 20mA

300
MHz
Collector Output
capacitance
RN1421~1427
Cob

VCB = 10V, IE = 0,
f = 1MHz

7

pF

RN1421
0.7
1.0
1.3
RN1422
1.54
2.2
2.86
RN1423
3.29
4.7
6.11
RN1424
7
10
13
RN1425
0.329
0.47
0.61
RN1426
0.7
1.0
1.3
Input resistor
RN1427
R1

1.54
2.2
2.86
kΩ

RN1421~1424
0.9
1.0
1.1
RN1425
0.0423 0.047 0.0517
RN1426
0.09
0.1
0.11
Resistor ratio
RN1427
R1/R2

0.2
0.22
0.24



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