NP60N06VDK-E2-AY datasheet(1/9 Pages) RENESAS

Part #	NP60N06VDK-E2-AY

Description	60 V ??60 A ??N-channel Power MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS1340EJ0100 Rev.1.00

Page 1 of 7

Apr 8, 2016

Data Sheet

NP60N06VDK

60 V – 60 A – N-channel Power MOS FET

Application: Automotive

Description

NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Super low on-state resistance

⎯ R

DS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 30 A)

• Low C

iss: Ciss = 2400 pF TYP. (VDS = 25 V)

• Designed for automotive application and AEC-Q101 qualified

Outline

Source

Body

Diode

Gate

Drain

TO-252(MP-3ZP)

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

Lead Plating

Packing

Package

NP60N06VDK-E1-AY *

1

Pure Sn (Tin)

Tape 800 p/reel

Taping (E1 type)

TO-252(MP-3ZP)

NP60N06VDK-E2-AY *

1

Taping (E2 type)

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1340EJ0100

Rev.1.00

Apr 8, 2016

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NP60N06VDK-E2-AY Datasheet(PDF) 1 Page - Renesas Technology Corp

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