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ALD212908ASAL Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD212908ASAL Datasheet(HTML) 2 Page - Advanced Linear Devices |
2 / 12 page ALD212908A/ALD212908 Advanced Linear Devices 2 of 12 Notes: 1 Consists of junction leakage currents OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V V- = GND TA = 25°C unless otherwise specified ALD212908A ALD212908 Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Gate Threshold Voltage VGS(th) 0.78 0.80 0.82 0.78 0.80 0.82 V IDS =20µA, VDS = 0.1V Offset Voltage VOS 12 2 10 mV VGS(th)M1 - VGS(th)M2 Offset Voltage Tempco TCVOS 55 µV/°CVDS1 = VDS2 GateThreshold Voltage Tempco TCVGS(th) -1.7 -1.7 mV/°CID = 20µA, VDS = 0.1V 0.0 0.0 ID = 760µA, VDS = 0.1V +0.6 +1.6 ID = 1.5 mA, VDS = 0.1V On Drain Current IDS(ON) 79 79 mA VGS = +3.8V, VDS = +3V 85 85 µAVGS = +0.9V, VDS = +0.1V Forward Transconductance GFS 38 38 mmho VGS = +3.8V VDS = +3.0V Transconductance Mismatch ∆GFS 1.8 1.8 % Output Conductance GOS 2.3 2.3 mmho VGS = +3.8V VDS = +3.0V Drain Source On Resistance RDS(ON) 14 14 Ω VGS = +5.8V VDS = +0.1V Drain Source On Resistance RDS(ON) 55 KΩ VGS = +0.8V, VDS = +0.1V 1.18 1.18 VGS = +0.9V, VDS = +0.1V Drain Source On Resistance ∆RDS(ON) 1.8 1.8 % VGS = +5.8V Tolerance VDS = +0.1V Drain Source On Resistance ∆RDS(ON) 0.6 0.6 % Mismatch Drain Source Breakdown BVDSX 10 10 V V- = VGS = -0.2V Voltage IDS = 10µA Drain Source Leakage Current1 IDS(OFF) 10 400 10 400 pA VGS = -0.2V, VDS = +5V V- = -5V 44 nA TA = 125°C Gate Leakage Current1 IGSS 5 200 5 200 pA VGS = +5V, VDS = 0V 11 nA TA = 125°C Input Capacitance CISS 30 30 pF Transfer Reverse Capacitance CRSS 22 pF Turn-on Delay Time ton 10 10 ns V+ = 5V, RL = 5KΩ Turn-off Delay Time toff 10 10 ns V+ = 5V, RL = 5KΩ Crosstalk 60 60 dB f = 100KHz ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Operating Current 80mA Power dissipation 500mW Operating temperature range SAL, PAL 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. |
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