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EPAD

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GENERAL DESCRIPTION

The ALD212904 precision enhancement mode N-Channel EPAD

array is precision matched at the factory using ALD’s proven EPAD

technology. These dual monolithic devices are enhanced additions to the

ALD110904 EPAD

and output conductance, particularly at very low supply voltages.

Intended for low voltage, low power small signal applications, the ALD212904

features precision +0.40V threshold voltage, which enables circuit designs with

input/output signals referenced to very low operating voltage ranges. With these

devices, a circuit with multiple cascading stages can be built to operate at ex-

tremely low supply/bias voltage levels. For example, a nanopower input ampli-

fier stage operating at less than 0.2V supply voltage has been successfully built

with these devices.

ALD212904 EPAD MOSFETs feature exceptional matched pair electrical char-

Built on a single monolithic chip, they also exhibit excellent temperature track-

ing characteristics. These precision devices are versatile as design components

for a broad range of analog small signal applications such as basic building

blocks for current mirrors, matching circuits, current sources, differential ampli-

fier input stages, transmission gates, and multiplexers. They also excel in lim-

ited operating voltage applications, such as very low level voltage-clamps and

nano-power normally-on circuits.

In addition to precision matched-pair electrical characteristics, each individual

EPAD MOSFET also exhibits well controlled manufacturing characteristics, en-

abling the user to depend on tight design limits from different production batches.

These devices are built for minimum offset voltage and differential thermal re-

sponse, and they can be used for switching and amplifying applications in +0.1V

to +10V (+0.05V to +5V) powered systems where low input bias current, low

the device operates in the subthreshold voltage region and exhibits conven-

tional sub threshold characteristics, with well controlled turn-off and sub-thresh-

old levels that operate the same as standard enhancement mode MOSFETs.

current of 30mA and input current of 300pA at 25°C is 30mA/300pA =

100,000,000, which translates into a dynamic operating current range of about

eight orders of magnitude. A series of four graphs titled “Forward Transfer Char-

the wide dynamic operating range of these devices.

Generally it is recommended that the V+ pin be connected to the most positive

voltage and the V- and IC (internally-connected) pins to the most negative volt-

age in the system. All other pins must have voltages within these voltage limits

at all times. Standard ESD protection facilities and handling procedures for static

sensitive devices are highly recommended when using these devices.

DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR

FEATURES & BENEFITS

• Sub-threshold voltage (nano-power) operation

• < 400mV min. operating voltage

• < 1nA min. operating current

• < 1nW min. operating power

• > 100,000,000:1 operating current ranges

• High transconductance and output conductance

• Output current > 50mA

• Matched and tracked tempco

• Tight lot-to-lot parametric control

• Low input capacitance and leakage currents

APPLICATIONS

• Low overhead current mirrors and current sources

• Zero Power Normally-On circuits

• Energy harvesting circuits

• Very low voltage analog and digital circuits

• Zero power fail-safe circuits

• Backup battery circuits & power failure detector

• Extremely low level voltage-clamps

• Extremely low level zero-crossing detector

• Matched source followers and buffers

• Precision current mirrors and current sources

• Matched capacitive probes and sensor interfaces

• Charge detectors and charge integrators

• High gain differential amplifier input stage

• Matched peak-detectors and level-shifters

• Multiple Channel Sample-and-Hold switches

• Precision Current multipliers

• Discrete matched analog switches/multiplexers

• Nanopower discrete voltage comparators

ALD212904

VGS(th)= +0.40V

*IC pins are internally connected, connect to V-

SAL, PAL PACKAGES

PIN CONFIGURATION

ALD212904

V-

1

2

3

6

7

8

4

5

M 1

M 2

V-

V-

V-

IC*

V+

*Contact factory for industrial temp. range or user-specified threshold voltage values.

Operating Temperature Range *

0°C to +70°C

8-Pin SOIC Package

8-Pin Plastic Dip Package

ALD212904SAL

ALD212904PAL