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PS9031-V Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # PS9031-V
Description  2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PS9031-V Datasheet(HTML) 8 Page - Renesas Technology Corp

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PS9031
Chapter Title
R08DS0131EJ0200 Rev.2.00
Page 8 of 18
Mar 11, 2016
TYPICAL CHARACTERISTICS (TA = 25
C, unless otherwise specified)
Remark
The graphs indicate nominal characteristics.
Ambient Temperature TA (°C)
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
25
50
75
100
150
125
0
300
250

200

150

100

50
25
50
75
100
150
125
0

3

2

1
0
VCC = 30 V,
VEE = GND,
Vth = 5 V
-50
-25
100 125
50
75
025
150
Forward Current IF (mA)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
1
0
02
3
35
30
25
20
15
10
5
50
40
30
20
10
Forward Voltage VF (V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
1.0
0.01
0.1
1
10
100
1.2
1.4
1.6
1.8
2.0
2.2
2.4
TA = 125°C
100°C
85°C
50°C
25°C
0°C
-40°C
High Level Output Current IOH (A)
HIGH LEVEL OUTPUT VOLTAGE SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
0.0
0.5
1.0
1.5
2.5
2.0
0
-6
-5
-4
-3
-2
-1
TA = 25°C
TA = 125°C
TA =-40°C
IFLH
IFHL
VCC = 30 V,
VEE = GND
VCC = 30 V,
VEE = GND,
IF = 10 mA


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