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NP89N06PDK-E1-AY Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # NP89N06PDK-E1-AY
Description  60 V ??90 A ??N-channel Power MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP89N06PDK-E1-AY Datasheet(HTML) 2 Page - Renesas Technology Corp

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NP89N06PDK
R07DS1343EJ0100 Rev.1.00
Page 2 of 7
Jun 01, 2016
Absolute Maximum Ratings
(TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±90
A
Drain Current (pulse)
1
ID(pulse)
±360
A
Total Power Dissipation (TC = 25°C)
PT1
147
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current
2
IAR
33
A
Repetitive Avalanche Energy
2
EAR
108
mJ
Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. RG = 25 Ω, VGS = 20 V → 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C)
1.02
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W


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