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SW7N70D Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW7N70D Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 5.0 1/7 SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-252 TO-251N TO-262N V DSS Drain to source voltage 700 V I D Continuous drain current (@T C=25 oC) 7* A Continuous drain current (@T C=100 oC) 4.4* A I DM Drain current pulsed (note 1) 28 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 431 mJ E AR Repetitive avalanche energy (note 1) 30 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 179 187 231 W Derating factor above 25oC 1.4 1.5 1.9 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-252 TO-251N TO-262N R thjc Thermal resistance, Junction to case 0.70 0.67 0.54 oC/W R thja Thermal resistance, Junction to ambient 91 67 oC/W *. Drain current is limited by junction temperature. BV DSS : 700V I D : 7A R DS(ON) : 1.2Ω 1. Gate 2. Drain 3. Source TO-252 1 2 3 Order Codes Item Sales Type Marking Package Packaging 1 SW D 7N70D SW7N70D TO-252 REEL 2 SW N 7N70D SW7N70D TO-251N TUBE 3 SW J 7N70D SW7N70D TO-262N TUBE 1 2 3 Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@VGS=10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, TV-Power General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. TO-251N 1 2 3 TO-262N 1 2 3 |
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