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SW640D Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW640D Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 6 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2017. Rev. 4.0 1/7 SW640D Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FT TO-263 V DSS Drain to source voltage 200 V I D Continuous drain current (@T C=25 oC) 18* A Continuous drain current (@T C=100 oC) 11* A I DM Drain current pulsed (note 1) 72 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 243 mJ E AR Repetitive avalanche energy (note 1) 33 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 119 29.5 110.6 W Derating factor above 25oC 0.95 0.23 0.88 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-220 TO-220FT TO-263 R thjc Thermal resistance, Junction to case 1.05 4.24 1.13 oC/W R thja Thermal resistance, Junction to ambient 54 49 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source Order Codes Item Sales Type Marking Package Packaging 1 SW P 640D SW640D TO-220 TUBE 2 SW Y 640D SW640D TO-220FT TUBE 3 SW B 640D SW640D TO-263 TUBE N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.15Ω)@VGS=10V Low Gate Charge (Typ 38nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Adaptor General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 200V I D : 18A R DS(ON) : 0.15Ω 1 2 3 TO-220 1 2 3 TO-220FT 1 2 3 TO-263 1 2 3 |
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