SW340R10ET datasheet(2/6 Pages) SEMIPOWER

Part #	SW340R10ET

Description	N-channel Enhanced mode TO-220 MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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2 / 6 page

Jul. 2015. Rev. 1.0

2/6

SW340R10ET

Electrical characteristic ( T

C = 25

oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

GS=0V, ID=250uA

100

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

I

D=250uA, referenced to 25

oC

0.11

V/oC

I

DSS

Drain to source leakage current

V

DS=100V, VGS=0V

1

uA

V

DS=80V, TC=125

oC

50

uA

I

GSS

Gate to source leakage current, forward

V

GS=20V, VDS=0V

100

nA

Gate to source leakage current, reverse

V

GS=-20V, VDS=0V

-100

nA

On characteristics

V

GS(TH)

Gate threshold voltage

V

DS=VGS, ID=250uA

2

4

V

R

DS(ON)

Drain to source on state resistance

V

GS=10V, ID=16A

34

42

m

Ω

G

fs

Forward transconductance

V

DS=20V, ID=16A

121

S

Dynamic characteristics

C

iss

Input capacitance

V

GS=0V, VDS=25V, f=1MHz

2090

pF

C

oss

Output capacitance

133

C

rss

Reverse transfer capacitance

90

t

d(on)

Turn on delay time

V

DS=50V, ID=16A, RG=5.1Ω,

V

GS=10V

(note 4,5)

17

ns

t

r

Rising time

32

t

d(off)

Turn off delay time

46

t

f

Fall time

17

Q

g

Total gate charge

V

DS=80V, VGS=10V, ID=16A

(note 4,5)

41

nC

Q

gs

Gate-source charge

9

Q

gd

Gate-drain charge

13

R

g

Gate resistance

V

DS=0V, Scan F mode

1.3

Ω

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

S

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

35

A

I

SM

Pulsed source current

140

A

V

SD

Diode forward voltage drop.

I

S=35A, VGS=0V

1.4

V

t

rr

Reverse recovery time

I

S=16A, VGS=0V,

dI

F/dt=100A/us

46

ns

Q

rr

Reverse recovery charge

72

nC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L =0.84mH, I

AS =16A, VDD=50V, RG=25Ω, Starting TJ = 25

oC

3.

I

SD ≤ 16A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25

oC

4.

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.

5.

Essentially independent of operating temperature.

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