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SW340R10ET Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW340R10ET Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
2 / 6 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jul. 2015. Rev. 1.0 2/6 SW340R10ET Electrical characteristic ( T C = 25 oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS=0V, ID=250uA 100 V ΔBV DSS / ΔT J Breakdown voltage temperature coefficient I D=250uA, referenced to 25 oC 0.11 V/oC I DSS Drain to source leakage current V DS=100V, VGS=0V 1 uA V DS=80V, TC=125 oC 50 uA I GSS Gate to source leakage current, forward V GS=20V, VDS=0V 100 nA Gate to source leakage current, reverse V GS=-20V, VDS=0V -100 nA On characteristics V GS(TH) Gate threshold voltage V DS=VGS, ID=250uA 2 4 V R DS(ON) Drain to source on state resistance V GS=10V, ID=16A 34 42 m Ω G fs Forward transconductance V DS=20V, ID=16A 121 S Dynamic characteristics C iss Input capacitance V GS=0V, VDS=25V, f=1MHz 2090 pF C oss Output capacitance 133 C rss Reverse transfer capacitance 90 t d(on) Turn on delay time V DS=50V, ID=16A, RG=5.1Ω, V GS=10V (note 4,5) 17 ns t r Rising time 32 t d(off) Turn off delay time 46 t f Fall time 17 Q g Total gate charge V DS=80V, VGS=10V, ID=16A (note 4,5) 41 nC Q gs Gate-source charge 9 Q gd Gate-drain charge 13 R g Gate resistance V DS=0V, Scan F mode 1.3 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction diode in the MOSFET 35 A I SM Pulsed source current 140 A V SD Diode forward voltage drop. I S=35A, VGS=0V 1.4 V t rr Reverse recovery time I S=16A, VGS=0V, dI F/dt=100A/us 46 ns Q rr Reverse recovery charge 72 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.84mH, I AS =16A, VDD=50V, RG=25Ω, Starting TJ = 25 oC 3. I SD ≤ 16A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25 oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. |
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