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SW35N10V Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW35N10V Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 6 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2016. Rev. 3.0 1/6 SW35N10V Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 100 V I D Continuous drain current (@T C=25 oC) 35* A Continuous drain current (@T C=100 oC) 22* A I DM Drain current pulsed (note 1) 140 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 392 mJ E AR Repetitive avalanche energy (note 1) 22 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 1.45 W Derating factor above 25oC 0.01 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thja Thermal resistance, Junction to ambient 86 oC/W *. Drain current is limited by junction temperature. Order Codes Item Sales Type Marking Package Packaging 1 SW HA 35N10V SW35N10V DFN5x6 REEL N-channel Enhanced mode DFN5*6 MOSFET Features High ruggedness Low R DS(ON) (Typ 11.6mΩ)@VGS=10V (Typ 12.4m Ω)@V GS=4.5V Low Gate Charge (Typ 117nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 100V I D : 35A R DS(ON) : 11.6mΩ@VGS=10V 12.4m Ω@V GS=4.5V 1 2 3 DFN5x6 |
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