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SW4N80K Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW4N80K Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2016. Rev. 3.0 1/7 SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-220F TO-251N TO-252 V DSS Drain to source voltage 800 V I D Continuous drain current (@T C=25 oC) 4* A Continuous drain current (@T C=100 oC) 2.5* A I DM Drain current pulsed (note 1) 16 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 40 mJ E AR Repetitive avalanche energy (note 1) 5 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 16.9 104.2 96.2 W Derating factor above 25oC 0.14 0.83 0.77 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-220F TO-251N TO-252 R thjc Thermal resistance, Junction to case 7.4 1.2 1.3 oC/W R thja Thermal resistance, Junction to ambient 54 90 oC/W *. Drain current is limited by junction temperature. BV DSS : 800V I D : 4A R DS(ON) : 1.8Ω 1. Gate 2. Drain 3. Source TO-220F 1 2 3 Order Codes Item Sales Type Marking Package Packaging 1 SW F 4N80K SW4N80K TO-220F TUBE 2 SW N 4N80K SW4N80K TO-251N TUBE 3 SW D 4N80K SW4N80K TO-252 REEL 1 2 3 Features High ruggedness Low R DS(ON) (Typ 1.8Ω)@VGS=10V Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED, Charge, Adaptor General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. TO-251N TO-252 1 2 3 1 2 3 |
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