NTD80N02-032 datasheet(3/8 Pages) ONSEMI

Part #	NTD80N02-032

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD80N02

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3

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

8 V

5.2 V

0.015

0.01

0.0075

0.0025

0

10

1

100

1000

0.005

0

30

2

1.5

1

0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0

0.07

0.05

0.02

0.01

4

0

26

8

10

Figure 3. On−Resistance versus

Gate−To−Source Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50

−50

100

75

0

−25

125

150

23

6

55

0

0.01

0.015

416

12

820

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10

20

40

2.5

3

VGS = 0 V

TJ = 125°C

TJ = 100°C

ID = 80 A

VDS = 10 V

VGS = 4.5 V

VGS = 10 V

TJ = 25°C

ID = 10 A

TJ = 25°C

VDS ≥ 24 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

TJ = 25°C

50

25

45

0.5

4

3.5

VGS = 3.0 V

4.2 V

3.2 V

3.4 V

3.6 V

3.8 V

4 V

4.4 V

4.6 V

5 V

0.04

0.03

0.06

60

65

70

75

80

60

90

80

100

70

4.8 V

6 V

6.5 V

9 V

0

0.0125

0.005

ID = 80 A

VDS = 4.5 V

0.1

0.01

TJ = 25°C

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NTD80N02-032 Datasheet(PDF) 3 Page - ON Semiconductor

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