MMBT2907AWT1 datasheet(2/4 Pages) ONSEMI

Part #	MMBT2907AWT1

Description	General Purpose Transistor PNP Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT2907AWT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 2)

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−60

−

Vdc

Collector − Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−60

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Base Cutoff Current

(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

IBL

−

−50

nAdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

ICEX

−

−50

nAdc

ON CHARACTERISTICS(3)

DC Current Gain (Note 2)

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −10 Vdc)

HFE

75

100

50

−

Collector − Emitter Saturation Voltage (Note 2)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VCE(sat)

−

−0.4

−1.6

Vdc

Base − Emitter Saturation Voltage (Note 2)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat)

−

−1.3

−2.6

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

200

−

MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

pF

Input Capacitance

(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

30

pF

SWITCHING CHARACTERISTICS

Turn−On Time

ton

−

45

Delay Time

(VCC = −30 Vdc,

IC = −150 mAdc, IB1 = −15 mAdc)

td

−

10

Rise Time

IC = −150 mAdc, IB1 = −15 mAdc)

tr

−

40

ns

Storage Time

ts

−

80

ns

Fall Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = 15 mAdc)

tf

−

30

Turn−Off Time

IB1 = IB2 = 15 mAdc)

toff

−

100

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

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