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MTB095N10KRL3 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTB095N10KRL3 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : Page No. : 5/9 MTB095N10KRL3 Preliminary CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.5 0.7 0.9 1.1 1.3 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 2 4 6 8 10 02 4 6 Qg, Total Gate Charge(nC) 8 VDS=50V VDS=80V ID=2A Maximum Safe Operating Area 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) RDS(ON) Limited DC 10ms 100ms 1ms 100 μs 10 μs TA=25°C, Tj=150°C, RθJA=50°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, RθJA=50°C/W |
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