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K9F1208B0B Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9F1208B0B
Description  64M x 8 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1208B0B Datasheet(HTML) 10 Page - Samsung semiconductor

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FLASH MEMORY
10
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Plane 0
Plane 1
Plane 2
Plane 3
(1024 Block)
(1024 Block)
(1024 Block)
(1024 Block)
Page 0
Page 1
Page 31
Page 30
Memory Map
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Page 0
Page 1
Page 31
Page 30
Block 4
Page 0
Page 1
Page 31
Page 30
Block 5
Page 0
Page 1
Page 31
Page 30
Block 6
Page 0
Page 1
Page 31
Page 30
Block 7
Page 0
Page 1
Page 31
Page 30
Block 4088
Page 0
Page 1
Page 31
Page 30
Block 4089
Page 0
Page 1
Page 31
Page 30
Block 4090
Page 0
Page 1
Page 31
Page 30
Block 4091
Page 0
Page 1
Page 31
Page 30
Block 4092
Page 0
Page 1
Page 31
Page 30
Block 4093
Page 0
Page 1
Page 31
Page 30
Block 4094
Page 0
Page 1
Page 31
Page 30
Block 4095
528byte Page Registers
Figure 3. Memory Array Map
528byte Page Registers
528byte Page Registers
528byte Page Registers


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