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FSCQ0765RT Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSCQ0765RT Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 24 page 
FSCQ0765RT 5 Electrical Characteristics (SenseFET Part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS = Max, Rating, VGS = 0V - - 200 µA VDS= 0.8*Max., Rating VGS = 0V, TC = 85 °C - - 300 µA Static Drain-source on Resistance (Note) RDS(ON) VGS = 10V, ID = 2.3A - 1.4 1.6 Ω Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz - 1415 1840 pF Output Capacitance Coss - 100 130 Reverse Transfer Capacitance Crss - 15 20 Turn on Delay Time td(on) VDD= 0.5BVDSS, ID= 7.0A (MOSFET switching times are essentially independent of operating temperature) -25 60 ns Rise Time tr - 60 130 Turn Off Delay Time td (off) - 110 230 Fall Time tf - 65 140 Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS = 10V, ID = 7.0A, VDS = 0.5BVDSS (MOSFET Switching times are essentially independent of operating temperature) -40 52 nC Gate-Source Charge Qgs - 7 9.1 Gate-Drain (Miller) Charge Qgd - 12 17 |
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