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RG4A Datasheet(PDF) 1 Page - Vishay Siliconix

Part # RG4A
Description  Fast Sinterglass Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

RG4A Datasheet(HTML) 1 Page - Vishay Siliconix

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VISHAY
RG4A to RG4J
Document Number 86076
Rev. 2, 28-Jan-03
Vishay Semiconductors
www.vishay.com
1
17133
Fast Sinterglass Diode
\
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Fast switching for high efficiency
• 3.0 ampere operation at Tamb = 50 °C with no ther-
mal runaway
• Hermetically sealed package
Mechanical Data
Case: Sintered glass case, G4
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Mounting Position: Any
Weight: 1040 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part
Type differentiation
Package
RG4A
VRRM = 50 V
G4
RG4B
VRRM = 100 V
G4
RG4D
VRRM = 200 V
G4
RG4G
VRRM = 400 V
G4
RG4J
VRRM = 600 V
G4
Parameter
Test condition
Part
Symbol
Value
Unit
Reverse voltage = Repetitive peak reverse
voltage
see electrical characteristics
RG4A
VR =
VRRM
50
V
see electrical characteristics
RG4B
VR =
VRRM
100
V
see electrical characteristics
RG4D
VR =
VRRM
200
V
see electrical characteristics
RG4J
VR =
VRRM
400
V
see electrical characteristics
RG1J
VR =
VRRM
600
V
Maximum average forward rectified current
0.375 " (9.5 mm) lead length at Tamb = 55 °C
IF(AV)
3.0
A
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100
A
Maximum average reverse current
at rated peak reverse voltage Tamb = 25 °C
IR(AV)
2.0
µA
at rated peak reverse voltage Tamb = 100 °C
IR(AV)
100
µA
Operating junction and storage temperature
range
TJ,
TSTG
- 55 to +
175
°C


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