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2SK3398 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3398 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3398 2002-09-04 5 rth - tw Safe operating area EAS – Tch Drain-source voltage VDS (V) Pulse width tw (S) Channel temperature (initial) Tch (°C) 0 25 100 200 300 500 400 50 75 100 125 150 0 003 10 m 100 m 1 m 10 m 100 m 1 10 0.01 0.1 0.03 0 3 1 3 0 01 0 02 0.05 0.1 0.2 Duty = 0 5 Single Pulse T PDM t Duty = t/T Rth (ch-c) = 1.25°C/W 0.03 1 0 3 3 30 100 10 100 1000 ID max (continuous) ID max (pulsed) * DC operation Tc = 25°C 1 ms * VDSS max 10 0.05 1 100 ms * *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 0 5 50 5 Wave form IAR BVDSS VDD VDS RG = 25 W VDD = 90 V, L = 4.3 mH ÷ ÷ ø ö ç ç è æ - × × × = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit -15 V 15 V |
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