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2SK3373 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3373 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3373 2002-09-02 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID - VGS Gate-source voltage VGS (V) VDS - VGS Drain current ID (A) ïYfsï - ID Drain current ID (A) RDS (ON) - ID 0 2 0 0.4 1 2 0 8 1 6 2 0 10 4 6 8 Common source Tc = 25°C pulse test VGS = 4 V 5 5 5 10 8 6 4 5 0 10 2 6 4 8 4 0 20 8 12 16 0 5 Common source Tc = 25°C pulse test 1 ID = 2 A Common source VDS = 20 V pulse test 0 5 1 3 2 4 2 0 10 4 6 8 Tc = -55°C 25 100 Common source Tc = 25°C pulse test 0 5 1 3 2 4 10 0 50 20 30 40 VGS = 4 V 5 4.5 10 7 5.5 6 6.5 8 25 0 2 0.1 10 10 3 1 0 3 0 5 0.5 1 3 5 0.3 Common source VDS = 20 V pulse test Tc = -55°C 100 5 0.1 1 0 3 0.5 3 5 1 10 5 30 3 0 5 Common source Tc = 25°C Pulse test 10 VGS = 10 V |
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