FQB33N10_04 datasheet(4/9 Pages) FAIRCHILD

Part #	FQB33N10

Description	100V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 9 page

Rev. A, April 2000

10

-5

10

-

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

No t e s

1 . Z

C

(t )

1 . 1 8

/W M a x .

2 . D u t y F a c t o r , D

t /t

2

3 . T

M

- T

C

P

DM

* Z

C

(t )

si n g l e p u l se

D= 0 . 5

0. 02

0. 2

0. 05

0. 1

0. 01

t

1 ,

S q u a r e W a v e P u l s e D u r a ti o n [s e c ]

25

50

75

100

125

150

175

0

5

10

15

20

25

30

35

T

C, Case Temperature []

10

0

10

1

10

2

10

0

10

1

10

2

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

Notes

1. T

C

25

o

C

2. T

175

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes

1. V

GS

10 V

2. I

D

16.5 A

T

J

, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

1. V

GS

= 0V

2. I

D = 250

A

T

J, Junc ion Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

1

PDM

t2

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