STPS30H60C datasheet(4/11 Pages) STMICROELECTRONICS

Part #	STPS30H60C

Description	Avalanche rated

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

STPS30H60C

4/11

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB, TO-247

D2PAK, I2PAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.1

δ=0.2

δ=0.5

Single pulse

T

δ=tp/T

tp

t (s)

p

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=0.1

δ=0.2

δ=0.5

Single pulse

T

δ=tp/T

tp

TO-220FPAB

t (s)

p

Z/R

th(j-c)

Figure 9.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

I (mA)

R

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

50

55

60

T

j=125°C

T

j=100°C

T

j=75°C

T

j=50°C

T

j=25°C

T

j=150°C

V (V)

R

C(nF)

0.1

1.0

10.0

1

10

100

F=1MHz

V

osc=30mVRMS

T

j=25°C

V (V)

R

Figure 11.

Forward voltage drop versus

forward current (per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, copper thickness = 35 µm)

(D2PAK)

I

(A)

FM

1

10

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

T

J=25 °C

Maximum values

T

J=125 °C

Maximum values

T

J=125 °C

Maximum values

T

J=125 °C

Typical values

T

J=125 °C

Typical values

V

(V)

FM

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

S(cm²)

R

(°C/W)

th(j-a)

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