2SJ620 datasheet(2/6 Pages) TOSHIBA

Part #	2SJ620

Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV)

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 6 page

2SJ620

2002-09-11

2

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

¾

±10

mA

Drain cut-OFF current

IDSS

VDS = -100 V, VGS = 0 V

¾

-100

mA

Drain-source breakdown voltage

V (BR) DSS

ID = -10 mA, VGS = 0 V

-100

¾

V

Gate threshold voltage

Vth

VDS = -10 V, ID = -1 mA

-0.8

¾

-2.0

V

VGS = -4 V, ID = -9 A

¾

85

120

Drain-source ON resistance

RDS (ON)

VGS = -10 V, ID = -9 A

¾

63

90

m

W

Forward transfer admittance

ïYfsï

VDS = -10 V, ID = -6 A

7

15

¾

S

Input capacitance

Ciss

¾

2900

¾

Reverse transfer capacitance

Crss

¾

480

¾

Output capacitance

Coss

VDS = -10 V, VGS = 0 V, f = 1 MHz

¾

1000

¾

pF

Rise time

tr

¾

25

¾

Turn-ON time

ton

¾

45

¾

Fall time

tf

¾

25

¾

Switching time

Turn-OFF time

toff

¾

170

¾

ns

Total gate charge

(gate-source plus gate-drain)

Qg

¾

140

¾

Gate-source charge

Qgs

¾

90

¾

Gate-drain (“miller”) charge

Qgd

VDD ~- -80 V, VGS = -10 V, ID = -18 A

¾

50

¾

nC

Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

¾

-18

A

Pulse drain reverse current

(Note 1)

IDRP

¾

-72

A

Forward voltage (diode)

VDSF

IDR = -18 A, VGS = 0 V

¾

1.7

V

Reverse recovery time

trr

¾

220

¾

ms

Reverse recovery charge

Qrr

IDR = -18 A, VGS = 0 V,

dIDR/dt = 50 A/ms

¾

0.97

¾

mC

Marking

※

Lot Number

Month (starting from alphabet A)

Year

(last number of the christian era)

※

Type

J620

Duty <= 1%, tw = 10 ms

-10 V

0 V

VGS

VDD ~- -50 V

ID = -9 A

VOUT

Similar Part No. - 2SJ620

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SJ620	191Kb / 6P	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications
	2SJ620	185Kb / 6P	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
	2SJ620	1Mb / 73P	Bipolar Small-Signal Transistors
	2SJ620	191Kb / 6P	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications
	2SJ620	185Kb / 6P	Switching Regulator and DC-DC Converter Applications Motor Drive Applications

More results

Similar Description - 2SJ620

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SJ567(TE16L1,NQ)	182Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)
	2SK2312	715Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
	2SK2312	244Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
	2SK3387	216Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
	2SJ567	184Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
	2SK3130	203Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
	2SK3342	129Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)
	2SK3310	234Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
	2SK3471	104Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
	2SK3314	263Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)

More results

2SJ620 Datasheet(PDF) 2 Page - Toshiba Semiconductor

2SJ620 Datasheet(HTML) 2 Page - Toshiba Semiconductor

Similar Part No. - 2SJ620

Similar Description - 2SJ620

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL