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SK35GAR12T4 Datasheet(PDF) 1 Page - Semikron International |
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SK35GAR12T4 Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SK 35 GAR 12T4 © by SEMIKRON Rev. 0 – 03.06.2013 1 SEMITOP® 2 GAR IGBT module SK 35 GAR 12T4 Features •Compact design • One screw mounting • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • High short circuit capability • Trench4 IGBT technology • CAL4F diode technology •VCE,sat with positive coefficient • UL recognized, file no. E 63 532 Typical Applications* •Inverter •Motor drive Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES Tj =25°C 1200 V IC Tj = 175 °C Ts =25°C 43 A Ts =70°C 35 A ICnom 35 A ICRM ICRM = 3 x ICnom 105 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =150 °C 10 µs Tj -40 ... 175 °C Chopper Diode IF Tj = 175 °C Ts =25°C 38 A Ts =70°C 30 A IFnom 35 A IFRM IFRM = 3 x IFnom 105 A IFSM 10 ms, sin 180°, Tj =150 °C 170 A Tj -40 ... 175 °C Freewheeling Diode IF Tj = 175 °C Ts =25°C 38 A Ts =70°C 30 A IFnom 35 A IFRM IFRM = 3xIFnom 105 A IFSM 10 ms, sin 180°, Tj =150 °C 170 A Tj -40 ... 175 °C Module It(RMS) A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Chopper IGBT VCE(sat) IC =35A VGE =15 V chiplevel Tj =25 °C 1.85 2.1 V Tj =150 °C 2.25 2.45 V VCE0 chiplevel Tj =25 °C 0.8 0.9 V Tj =150 °C 0.7 0.8 V rCE VGE =15 V chiplevel Tj =25 °C 30.0 34.3 m Tj =150 °C 44.3 47.1 m VGE(th) VGE =VCE V, IC =1.2 mA 55.8 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 0.062 0.186 mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 1.95 nF Coes f=1MHz 0.155 nF Cres f=1MHz 0.115 nF QG - 8 V...+ 15 V 189 nC RGint Tj =25°C - |
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