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SK30MLI066P Datasheet(PDF) 2 Page - Semikron International |
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SK30MLI066P Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SK 30 MLI 066p 2 Rev. 2 – 07.10.2014 © by SEMIKRON td(on) VCC = 300 V IC =30A VGE = +15/-7 V di/dton = 2335 A/µs di/dtoff =2335 A/µs RG on =25 Ω RG off =25 Ω Tj =150 °C 24 ns tr Tj =150 °C 27 ns Eon Tj =150 °C 0.97 mJ td(off) Tj =150 °C 328 ns tf Tj =150 °C 54 ns Eoff Tj =150 °C 1.77 mJ Rth(j-s) per IGBT 1.65 K/W Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =30A chiplevel Tj =25 °C 1.50 1.65 V Tj =150 °C 1.50 1.65 V VF0 Tj =25 °C 11.1 V Tj =150 °C 0.8 0.9 V rF Tj =25 °C 16.7 20 mΩ Tj =150 °C 20 23.3 mΩ IRRM IF =30A di/dtoff =2335 A/µs VGE =-7 V VR = 300 V Tj =150 °C 30 A Qrr Tj =150 °C 1.6 µC Err Tj =150 °C 0.26 mJ Rth(j-s) per Diode 2.3 K/W Clamping diode VF = VEC IF =30A chiplevel Tj =25 °C 1.50 1.65 V Tj =150 °C 1.50 1.65 V VF0 Tj =25 °C 11.1 V Tj =150 °C 0.8 0.9 V rF Tj =25 °C 16.7 20 mΩ Tj =150 °C 20 23.3 mΩ IRRM IF =30A di/dtoff =2335 A/µs VGE =-7 V VR = 300 V Tj =150 °C 30 A Qrr Tj =150 °C 1.6 µC Err Tj =150 °C 0.26 mJ Rth(j-s) per Diode 2.3 K/W Module Ms to heatsink 2.25 2.5 Nm w30 g Temperature Sensor R100 Ω B100/125 K Characteristics Symbol Conditions min. typ. max. Unit SEMITOP® 3 Press-Fit MLI 3-Level NPC Inverter SK 30 MLI 066p Features • One screw mounting module • Solder free mounting with Press-Fit terminals • Fully compatible with other SEMITOP® Press-Fit types • Improved thermal performances by aluminium oxide substrate • Trench IGBT technology • CAL technology FWD • Integrated NTC temperature sensor • UL recognized, file no. E 63 532 Typical Applications* •3 Level Inverter •UPS Remarks Dynamic measure: DUT=IGBT (gate pin1) and Neutral Clamp Diode (cathode pin16) as free-wheeling diode |
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