SUM110N10-09-E3 datasheet(3/5 Pages) VISHAY

Part #	SUM110N10-09-E3

Description	N-Channel 100-V (D-S) 200C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUM110N10-09

Vishay Siliconix

Document Number: 70677

S-32523—Rev. C, 08-Dec-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2000

4000

6000

8000

10000

0

255075

100

0

4

8

12

16

20

0

50

100

150

200

0

50

100

150

200

250

0

20

40

60

80

100

120

0.000

0.003

0.006

0.009

0.012

0.015

0

20

40

60

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100

120

0

50

100

150

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250

012

34

567

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50

100

150

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0

2468

10

Output Characteristics

Transfer Characteristics

Capacitance

Gate Charge

Transconductance

On-Resistance vs. Drain Current

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

Qg − Total Gate Charge (nC)

ID − Drain Current (A)

VDS − Drain-to-Source Voltage (V)

25_C

−55_C

TC = 125_C

VDS = 50 V

ID = 85 A

VGS = 10 thru 7 V

VGS = 10 V

Ciss

Coss

TC = −55_C

25_C

125_C

4 V

ID − Drain Current (A)

6 V

Crss

5 V

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SUM110N10-09-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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