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SUM110N10-09 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SUM110N10-09
Description  N-Channel 100-V (D-S) 200C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM110N10-09 Datasheet(HTML) 4 Page - Vishay Siliconix

   
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SUM110N10-09
Vishay Siliconix
www.vishay.com
4
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
2.5
3.0
−50 −25
0
25
50
75 100 125 150 175 200
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TJ − Junction Temperature (_C)
VSD − Source-to-Drain Voltage (V)
100
10
1
0.3
0.6
0.9
1.2
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
0
90
95
100
105
110
115
120
125
−50 −25
0
25
50
75 100 125 150 175 200
TJ − Junction Temperature (_C)
tin (Sec)
1000
10
0.00001
0.001
0.1
1
0.1
0.01
IAV (A) @ TA = 150_C
ID = 10 mA
100
1
0.0001
IAV (A) @ TA = 25_C


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