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SUM110N10-09 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUM110N10-09
Description  N-Channel 100-V (D-S) 200C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM110N10-09 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D 200_C Junction Temperature
D New Package with Low Thermal Resistance
D 100% Rg Tested
APPLICATIONS
D Automotive
− 42-V Power Bus
− DC/DC Conversion
− Motor Drivers
SUM110N10-09
Vishay Siliconix
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
1
N-Channel 100-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
100
0.0095 @ VGS = 10 V
110 a
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
Ordering Information: SUM110N10-09
SUM110N10-09-E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 175_C)
TC = 25_C
ID
110a
Continuous Drain Current (TJ = 175_C)
TC = 125_C
ID
87a
A
Pulsed Drain Current
IDM
440
A
Avalanche Current
IAR
75
Repetitive Avalanche Energyb
L = 0.1 mH
EAR
280
mJ
Maximum Power Dissipationb
TC = 25_C
PD
437.5c
W
Maximum Power Dissipationb
TA = 25_Cd
PD
3.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 200
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)d
RthJA
40
_C/W
Junction-to-Case (Drain)
RthJC
0.4
_C/W
Notes
a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).


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