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CSPEMI307A Datasheet(PDF) 3 Page - ON Semiconductor

Part No. CSPEMI307A
Description  4-Channel ESD/EMI Filter Array Plus 4-Channel ESD
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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CSPEMI307A Datasheet(HTML) 3 Page - ON Semiconductor

   
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CSPEMI307A
http://onsemi.com
3
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
R
Resistance
80
100
120
W
C
Capacitance
At 2.5 V DC
24
30
36
pF
TCR
Temperature Coefficient of Resistance
1200
ppm/°C
TCC
Temperature Coefficient of Capacitance
At 2.5 V DC
−300
ppm/°C
VDIODE
Diode Voltage (reverse bias)
IDIODE = 10 mA
5.5
V
ILEAK
Diode Leakage Current (reverse bias)
VDIODE = 3.3 V
100
nA
VSIG
Signal Voltage
Positive Clamp
Negative Clamp
ILOAD = 10 mA
5.6
−0.4
6.8
−0.8
9.0
−1.5
V
VESD
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2 Level 4
(Notes 2 and 4)
±30
±15
kV
VCL
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Notes 2, 3 and 4)
+10
−5
V
fC
Cut−off frequency
ZSOURCE = 50 W, ZLOAD = 50 W
R = 100 W, C = 30 pF
64
MHz
1. TA = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A2, then clamping
voltage is measured at Pin C2.
4. Unused pins are left open.
PERFORMANCE INFORMATION
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
Figure 1. Insertion Loss vs. Frequency (A2−C2 to GND B2)


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