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SI3590DV Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI3590DV
Description  N- and P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3590DV Datasheet(HTML) 4 Page - Vishay Siliconix

  SI3590DV Datasheet HTML 1Page - Vishay Siliconix SI3590DV Datasheet HTML 2Page - Vishay Siliconix SI3590DV Datasheet HTML 3Page - Vishay Siliconix SI3590DV Datasheet HTML 4Page - Vishay Siliconix SI3590DV Datasheet HTML 5Page - Vishay Siliconix SI3590DV Datasheet HTML 6Page - Vishay Siliconix SI3590DV Datasheet HTML 7Page - Vishay Siliconix SI3590DV Datasheet HTML 8Page - Vishay Siliconix  
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Si3590DV
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
0.00
0.05
0.10
0.15
0.20
0.25
0
1234
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
ID = 3 A
1.2
1.5
0.1
1
10
0.00
0.3
0.6
0.9
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
0.01
0
1
6
8
2
4
10
30
0.1
Single Pulse Power, Junction-to-Ambient
Time (sec)
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
ID = 250 mA
Threshold Voltage
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Case
VDS - Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
1 ms
0.1
TC = 25_C
Single Pulse
10 ms
100 ms
dc
100
ms
IDM Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited
10 s, 1 s


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