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SI3590DV Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3590DV Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 8 page 
Si3590DV Vishay Siliconix New Product www.vishay.com 4 Document Number: 72032 S-21979—Rev. A, 04-Nov-02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL 0.00 0.05 0.10 0.15 0.20 0.25 0 1234 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ID = 3 A 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ - Temperature (_C) Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TC = 25_C Single Pulse 10 ms 100 ms dc 100 ms IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited 10 s, 1 s |
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