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SI3590DV Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3590DV Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si3590DV Vishay Siliconix New Product www.vishay.com 2 Document Number: 72032 S-21979—Rev. A, 04-Nov-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static VDS = VGS, ID = 250 mA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA P-Ch -0.6 -1.5 V " N-Ch "100 Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V P-Ch "100 nA VDS = 24 V, VGS = 0 V N-Ch 1 VDS = -24 V, VGS = 0 V P-Ch -1 m Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 mA VDS = -24 V, VGS = 0 V, TJ = 55_C P-Ch -5 VDS w 5 V, VGS = 4.5 V N-Ch 5 On-State Drain Currenta ID(on) VDS p -5 V, VGS = -4.5 V P-Ch -5 A VGS = 4.5 V, ID = 3 A N-Ch 0.062 0.077 VGS = -4.5 V, ID = -2 A P-Ch 0.135 0.170 W Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 2 A N-Ch 0.095 0.120 W VGS = -2.5 V, ID = -1.2 A P-Ch 0.235 0.300 VDS = 5 V, ID = 3 A N-Ch 10 Forward Transconductancea gfs VDS = -5 V, ID = -2 A P-Ch 5 S IS = 1.05 A, VGS = 0 V N-Ch 0.80 1.10 Diode Forward Voltagea VSD IS = -1.05 A, VGS = 0 V P-Ch -0.83 -1.10 V Dynamicb N-Ch 3 4.5 Total Gate Charge Qg N-Channel P-Ch 3.8 6 N-Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A N-Ch 0.6 Gate-Source Charge Qgs P-Channel P-Ch 0.6 nC VDS = -15 V, VGS = -4.5 V, ID = -2 A N-Ch 1.0 Gate-Drain Charge Qgd P-Ch 1.5 N-Ch 5 8 Turn-On Delay Time td(on) P-Ch 5 8 N-Channel W N-Ch 12 23 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Ch 15 23 P-Channel W N-Ch 13 23 Turn-Off Delay Time td(off) P-Channel VDD = -15 V, RL = 15 W I ^ -1 A, V = -10 V, R = 6 W P-Ch 20 30 ns ID ^ -1 A, VGEN = -10 V, RG = 6 W N-Ch 7 12 Fall Time tf P-Ch 20 30 Source-Drain IF = 1.05 A, di/dt = 100 A/ms N-Ch 15 25 Source-Drain Reverse Recovery Time trr IF = -1.05 A, di/dt = 100 A/ms P-Ch 18 30 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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