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SI3590DV Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI3590DV
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3590DV Datasheet(HTML) 2 Page - Vishay Siliconix

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Si3590DV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.5
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 mA
P-Ch
-0.6
-1.5
V
"
N-Ch
"100
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
P-Ch
"100
nA
VDS = 24 V, VGS = 0 V
N-Ch
1
VDS = -24 V, VGS = 0 V
P-Ch
-1
m
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = -24 V, VGS = 0 V, TJ = 55_C
P-Ch
-5
VDS w 5 V, VGS = 4.5 V
N-Ch
5
On-State Drain Currenta
ID(on)
VDS p -5 V, VGS = -4.5 V
P-Ch
-5
A
VGS = 4.5 V, ID = 3 A
N-Ch
0.062
0.077
VGS = -4.5 V, ID = -2 A
P-Ch
0.135
0.170
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 2 A
N-Ch
0.095
0.120
W
VGS = -2.5 V, ID = -1.2 A
P-Ch
0.235
0.300
VDS = 5 V, ID = 3 A
N-Ch
10
Forward Transconductancea
gfs
VDS = -5 V, ID = -2 A
P-Ch
5
S
IS = 1.05 A, VGS = 0 V
N-Ch
0.80
1.10
Diode Forward Voltagea
VSD
IS = -1.05 A, VGS = 0 V
P-Ch
-0.83
-1.10
V
Dynamicb
N-Ch
3
4.5
Total Gate Charge
Qg
N-Channel
P-Ch
3.8
6
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 2 A
N-Ch
0.6
Gate-Source Charge
Qgs
P-Channel
P-Ch
0.6
nC
VDS = -15 V, VGS = -4.5 V, ID = -2 A
N-Ch
1.0
Gate-Drain Charge
Qgd
P-Ch
1.5
N-Ch
5
8
Turn-On Delay Time
td(on)
P-Ch
5
8
N-Channel
W
N-Ch
12
23
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
15
23
P-Channel
W
N-Ch
13
23
Turn-Off Delay Time
td(off)
P-Channel
VDD = -15 V, RL = 15 W
I
^ -1 A, V
= -10 V, R = 6
W
P-Ch
20
30
ns
ID ^ -1 A, VGEN = -10 V, RG = 6 W
N-Ch
7
12
Fall Time
tf
P-Ch
20
30
Source-Drain
IF = 1.05 A, di/dt = 100 A/ms
N-Ch
15
25
Source-Drain
Reverse Recovery Time
trr
IF = -1.05 A, di/dt = 100 A/ms
P-Ch
18
30
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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