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SI3590DV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3590DV Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 8 page  FEATURES D TrenchFETr Power MOSFET D Ultra Low rDS(on) N- and P-Channel for High Efficiency D Optimized for High-Side/Low-Side D Minimized Conduction Losses APPLICATIONS D Portable Devices Including PDAs, Cellular Phones and Pagers Si3590DV Vishay Siliconix New Product Document Number: 72032 S-21979—Rev. A, 04-Nov-02 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 N-Channel 30 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 P-Channel -30 0.300 @ VGS = -2.5 V -1.2 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS "12 "12 V _ TA = 25_C 3 2.5 -2 -1.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 2.3 2.0 -1.6 -1.3 Pulsed Drain Current IDM 8 -8 A Continuous Source Current (Diode Conduction)a IS 1.05 0.75 -1.05 -0.75 TA = 25_C 1.15 0.83 1.15 0.83 Maximum Power Dissipationa TA = 70_C PD 0.70 0.53 0.70 0.53 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ Max Typ Max Unit t v 10 sec 93 110 93 110 Maximum Junction-to-Ambienta Steady State RthJA 130 150 130 150 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 75 90 75 90 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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