SGP07N120

SGB07N120

Power Semiconductors

1Jul-02

Fast IGBT in NPT-technology

• 40lower E

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

Package

Ordering Code

SGP07N120

1200V

8A

0.7mJ

150

°C

TO-220AB

Q67040-S4272

SGB07N120

TO-263AB(D2PAK)

Q67040-S4273

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

1200

V

DC collector current

°C

°C

16.5

7.9

27

Turn off safe operating area

≤ 1200V, T

j

≤ 150°C

-

27

A

Gate-emitter voltage

±20

V

Avalanche energy, single pulse

Ω, start at T

°C

40

mJ

Short circuit withstand time

1)

≤ V

CC

≤ 1200V, T

j

≤ 150°C

10

µs

Power dissipation

°C

125

W

Operating junction and storage temperature

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

°C

G

C

E

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)