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SAA4979H Datasheet(PDF) 31 Page - NXP Semiconductors |
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SAA4979H Datasheet(HTML) 31 Page - NXP Semiconductors |
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31 / 52 page  2002 May 28 31 Philips Semiconductors Product specification Sample rate converter with embedded high quality dynamic noise reduction and expansion port SAA4979H Table 11 Power control 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Machine model class B, equivalent to discharging a 200 pF capacitor through a 0 Ω series resistor (0 Ω is actually 0.75 µH+10 Ω). 2. Human body model class B, equivalent to discharging a 100 pF capacitor through a 1500 Ω series resistor. SFR ADDRESS (HEX) BIT READ/WRITE NAME DESCRIPTION Special function register 87H (PCON); reset value: 00H 87 0 read and write IDL Idle mode bit: 0 = normal operation, 1 = Idle mode operation 1 read and write PD Power-down bit: 0 = normal operation, 1 = Power-down mode 2to3 −− reserved 4 read and write WLE Watchdog load enable: 0 = loading of Watchdog timer disabled, 1 = loading of Watchdog timer enabled EW enable Watchdog: 0 = Watchdog disabled, 1 = Watchdog enabled; once this bit is set only a synchronous reset can clear it 5 read and write RFI radio frequency interference bit: disables toggling of internal ALE signal during on-chip program access if set to logic 1 6 read and write ARD auxiliary RAM disable: setting this bit will force MOVX instructions to access off-chip memory instead of AUXRAM 7 −− reserved SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDDD digital supply voltage −0.5 +4.0 V VDDA analog supply voltage −0.5 +4.0 V VDDI internal I/O supply voltage −0.5 +4.0 V VDDO I/O supply voltage VDDD = 3.3 V −0.5 +3.8 V VDDP supply voltage for protection circuits −0.5 +5.5 V VI input voltage for all digital input pins VDDP =5V −0.5 +5.5 V VDDP = 3.3 V −0.5 +3.8 V VI input voltage for all digital I/O pins −0.5 +3.8 V IDD(tot) total supply current − 300 mA IO short circuit output current − 30 mA Ptot total power dissipation − 1.2 W Tstg storage temperature −25 +150 °C Tj junction temperature 0 +125 °C Tamb ambient temperature 0 +70 °C Ves electrostatic handling voltage note 1 −200 +200 V note 2 −2000 +2000 V |
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